Microstructure and ferroelectric properties of sol-gel graded PZT (40/52/60) and (60/52/40) thin films

resumo

Graded Pb(Zr-x,Ti1 - x)O-3 films with Zr compositions varied across the thickness direction were deposited on Pt/Ti/SiO2/Si substrate using a conventional spin-coating method. The up- and down-graded PZT films exhibited the perovskite polycrystalline structure. Microstructure investigations of the films showed a dense texture and successive layers of different compositions. The relative permittivities of the up- and downgraded PZT films measured at 1 kHz and room temperature were 1846 and 1019, respectively. Good dielectric and ferroelectric properties as well as the low-temperature processing suggested that the compositionally graded PZT films were promising for memory device applications. (c) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

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Materials Science

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Khaenamkaew, P; Bdikin, ID; Kholkin, AL; Muensit, S

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