Microstructure and ferroelectric properties of sol-gel graded PZT (40/52/60) and (60/52/40) thin films

abstract

Graded Pb(Zr-x,Ti1 - x)O-3 films with Zr compositions varied across the thickness direction were deposited on Pt/Ti/SiO2/Si substrate using a conventional spin-coating method. The up- and down-graded PZT films exhibited the perovskite polycrystalline structure. Microstructure investigations of the films showed a dense texture and successive layers of different compositions. The relative permittivities of the up- and downgraded PZT films measured at 1 kHz and room temperature were 1846 and 1019, respectively. Good dielectric and ferroelectric properties as well as the low-temperature processing suggested that the compositionally graded PZT films were promising for memory device applications. (c) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

keywords

ACTUATORS

subject category

Materials Science

authors

Khaenamkaew, P; Bdikin, ID; Kholkin, AL; Muensit, S

our authors

Share this project:

Related Publications

We use cookies for marketing activities and to offer you a better experience. By clicking “Accept Cookies” you agree with our cookie policy. Read about how we use cookies by clicking "Privacy and Cookie Policy".