abstract
We report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC.
keywords
MAGNETIC SEMICONDUCTORS; EMISSION; DETECTORS
subject category
Physics
authors
Pereira, LMC; Wahl, U; Correia, JG; Amorim, LM; Silva, DJ; Bosne, E; Decoster, S; da Silva, MR; Temst, K; Vantomme, A
our authors
Daniel José da Silva
Post-Doc Fellowship
Eric David Bosne
MSc Studentacknowledgements
This work was supported by the Portuguese Foundation for Science and Technology (CERN/FP/123585/2011 and SFRH/BD/35761/2007), the European Union Seventh Framework through ENSAR (European Nuclear Science and Applications Research, Contract No. 262010) and SPIRIT (Support of Public and Industrial Research Using Ion Beam Technology, Contract No. 227012), the Fund for Scientific Research-Flanders (FWO), and the Concerted Action of the KU Leuven (GOA/2009/006 and GOA/14/007).