Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping

abstract

X-ray Reciprocal Space Mapping (RSM) is a powerful tool to explore the structure of semiconductor materials. However, conventional lab-based RSMs are usually measured in two dimensions (2D) ignoring the third dimension of diffraction-space volume. We report the use of a combination of X-ray microfocusing and state-of-the-art 2D area detectors to study the full volume of diffraction-space while probing III-nitride materials on the microscale. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

keywords

ALUMINUM NITRIDE; DIFFRACTION; GAN

subject category

Materials Science; Physics

authors

Kachkanov, V; Dolbnya, I; O'Donnell, K; Lorenz, K; Pereira, S; Watson, I; Sadler, T; Li, HN; Zubialevich, V; Parbrook, P

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