Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits

abstract

Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching.

keywords

NANOCRYSTALS; SURFACE

subject category

Materials Science

authors

Mahat, M; Llopis, A; Schaller, RD; Watson, I; Periera, S; Neogi, A

our authors

acknowledgements

The authors would like to acknowledge the Argonne National Laboratory, Center for Nanoscale Materials, Chicago, IL, Grant No. 25567.

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